data sheet 1 05.99 type ordering code tape and reel information pin configuration marking package 123 bss 149 q62702-s623 bulk g d s ss149 to-92 bss 149 q67000-s252 e6325: 2000 pcs/carton; ammopack maximum ratings parameter symbol values unit drain-source voltage v ds 200 v drain-gate voltage, r gs = 20 k w v dgr 200 gate-source voltage v gs 20 esd sensitivity (hbm) as per mil-std 883 C class 1 continuous drain current, t a = 34 ?c i d 0.35 a pulsed drain current, t a = 25 ?c i d puls 1.05 max. power dissipation, t a = 25 ?c p tot 1.0 w operating and storage temperature range t j , t stg C 55 + 150 ?c thermal resistance, chip-ambient (without heat sink) r thja 125 k/w din humidity category, din 40 040 C e C iec climatic category, din iec 68-1 C 55/150/56 sipmos a small-signal transistor 1 2 3 1 2 3 l v ds 200 v l i d 0.35 a l r ds(on) 3.5 w l n channel l depletion mode l high dynamic resistance l available grouped in v gs(th) bss 149
bss 149 data sheet 2 05.99 electrical characteristics at t j = 25 ?c, unless otherwise specified. parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs = - 3 v, i d = 0.25 ma v (br)dss 200 C C v gate threshold voltage v ds = 3 v, i d = 1 ma v gs(th) - 1.8 - 1.2 - 0.7 drain-source cutoff current v ds = 200 v, v gs = - 3 v t j = 25 ?c t j = 125 ?c i dss C C C C 0.2 200 m a gate-source leakage current v gs = 20 v, v ds = 0 i gss C 10 100 na drain-source on-resistance v gs = 0 v, i d = 0.05 a r ds(on) C 2.5 3.5 w dynamic characteristics forward transconductance v ds 3 2 i d r ds(on)max , i d = 0.35 a g fs 0.4 0.6 C s input capacitance v gs = 0, v ds = 25 v, f = 1 mhz c iiss C 500 670 pf output capacitance v gs = 0, v ds = 25 v, f = 1 mhz c oss C4060 reverse transfer capacitance v gs = 0, v ds = 25 v, f = 1 mhz c rss C1220 turn-on time t on , ( t on = t d(on) + t r ) v dd =30v, v gs = - 2 v ... + 5 v, r gs =50 w , i d = 0.29 a t d(on) C 7 10 ns t r C2030 turn-off time t off , ( t off = t d(off) + t f ) v dd =30v, v gs = - 2 v ... + 5 v, r gs =50 w , i d = 0.29 a t d(off) C6080 t f C5065
bss 149 data sheet 3 05.99 electrical characteristics (contd) at t j = 25 ?c, unless otherwise specified. parameter symbol values unit min. typ. max. reverse diode continuous reverse drain current t a = 25 ?c i s C C 0.35 a pulsed reverse drain current t a = 25 ?c i sm C C 1.05 diode forward on-voltage i f = 0.7 a, v gs = 0 v sd C 0.8 1.2 v v gs(th) grouping symbol limit values unit test condition min. max. range of v gs(th) d v gs(th) C 0.15 v C threshold voltage selected in groups 1) : p r s t u v w 1) a specific group cannot be ordered seperately. each reel only contains transistors from one group. v gs(th) C 0.95 C 1.08 C 1.21 C 1.34 C 1.47 C 1.60 C 1.73 C 0.80 C 0.93 C 1.06 C 1.19 C 1.32 C 1.45 C 1.58 v v v v v v v v ds1 = 0.2 v v ds2 = 3 v; i d = 1 ma
bss 149 data sheet 4 05.99 characteristics at t j = 25 ?c, unless otherwise specified. total power dissipation p tot = f ( t a ) typ. output characteristics i d = f ( v ds ) parameter: t p = 80 m s safe operating area i d = f ( v ds ) parameter: d = 0.01, t c = 25 ?c typ. drain-source on-resistance r ds(on) = f ( i d ) parameter: v gs
bss 149 data sheet 5 05.99 typ. transfer characteristics i d = f ( v gs ) parameter: t p = 80 m s, v ds 3 2 i d r ds(on)max. drain-source on-resistance r ds(on) = f ( t j ) parameter: i d = 0.05 a, v gs = 0 v, (spread) typ. forward transconductance g fs = f ( i d ) parameter: v ds 3 2 i d r ds(on)max. , t p = 80 m s typ. capacitances c = f ( v ds ) parameter: v gs = 0, f = 1 mhz
bss 149 data sheet 6 05.99 gate threshold voltage v gs(th) = f ( t j ) parameter: v ds = 3 v, i d = 1 ma, (spread) drain current i d = f ( t a ) parameter: v gs 3 3 v forward characteristics of reverse diode i f = f ( v sd ) parameter: t p = 80 m s, t j , (spread) drain-source breakdown voltage v (br) dss = b v (br)dss (25 ?c)
|
